Insulated Gate Bipolar Transistor Market Growth Opportunities and Forecast till 2030
The Global Insulated Gate Bipolar Transistor (IGBT) Market Size valued for USD 6.1 Billion in 2021 and is anticipated to reach USD 13.9 Billion by 2030 with a CAGR of 9.7% from 2022 to 2030.
IGBT is an abbreviation for Insulated Gate Bipolar Transistor. It is a semiconductor device that combines the greatest attributes of a MOSFET with a BJT to produce high voltage and high current switching capabilities. Power supply, motor control, renewable energy systems, electric vehicles, and industrial equipment all employ IGBTs. They are especially helpful in applications requiring high voltage and current switching, such as power converters, inverters, and variable-frequency motors.
One of the primary advantages of IGBTs is their ability to tolerate high current loads while also switching on and off quickly. As a result, they are extremely efficient and appropriate for use in high-power applications. Furthermore, IGBTs have a low on-state voltage drop, which aids in minimizing power losses. Overall, IGBTs perform well and are widely utilized in industrial and commercial applications. They are projected to play an important role in the development of new technologies, particularly in renewable energy and electric transportation.
Parameter |
Insulated Gate Bipolar Transistor (IGBT) Market |
Insulated Gate Bipolar Transistor (IGBT) Market Size in 2021 |
US$ 6.1 Billion |
Insulated Gate Bipolar Transistor (IGBT) Market Forecast By 2030 |
US$ 13.9 Billion |
Insulated Gate Bipolar Transistor (IGBT) Market CAGR During 2022 – 2030 |
9.7% |
Insulated Gate Bipolar Transistor (IGBT) Market Analysis Period |
2018 - 2030 |
Insulated Gate Bipolar Transistor (IGBT) Market Base Year |
2021 |
Insulated Gate Bipolar Transistor (IGBT) Market Forecast Data |
2022 - 2030 |
Segments Covered |
By Product, By Power Rating, By Application, and By Region |
Insulated Gate Bipolar Transistor (IGBT) Market Regional Scope |
North America, Europe, Asia Pacific, Latin America, and Middle East & Africa |
Key Companies Profiled |
ABB Ltd., Danfoss Group, Fuji Electric Co., Ltd., Hitachi, Ltd., Inneon Technologies AG, Littelfuse, Inc. (IXYS)., Mitsubishi Electric Corporation, Rohm Co., Ltd., Starpower, and Toshiba Corporation. |
Report Coverage |
Market Trends, Drivers, Restraints, Competitive Analysis, Player Profiling, Regulation Analysis |
Insulated Gate Bipolar Transistor (IGBT) Market Dynamics
Several factors are driving the global insulated gate bipolar transistor (IGBT) market, including rising need for energy-efficient power electronics, the growing popularity of electric vehicles, and the expanding acceptance of renewable energy sources.
Demand for energy-efficient power electronics is one of the primary drivers driving the growth of the IGBT industry. Because of their rapid switching speed and low power losses, IGBTs are widely utilized in power electronics, making them a perfect choice for applications such as inverters and motor drives. As demand for energy-efficient devices grows, the IGBT market is likely to expand significantly in the coming years.
The growing popularity of electric vehicles is also propelling the IGBT market forward. Because of their capacity to tolerate high currents and voltages while simultaneously offering efficient switching, IGBTs are employed in electric vehicle powertrain. As the adoption of electric vehicles continues to climb, the demand for IGBTs in this industry is likely to skyrocket.
Another factor fueling the expansion of the IGBT industry is the increasing use of renewable energy sources. Because of its capacity to efficiently convert DC electricity to AC power, IGBTs are employed in solar inverters and wind turbines. As renewable energy sources become more popular, the need for IGBTs in this industry is projected to rise.
Despite the multiple growth factors, the IGBT market faces several hurdles. The high cost of IGBTs in comparison to other power electronics devices, for example, can be a barrier to adoption, particularly in price-sensitive sectors. Furthermore, increased competition from other semiconductor devices such as MOSFETs and SJ-MOSFETs may represent a long-term risk to the expansion of the IGBT market.
Insulated Gate Bipolar Transistor (IGBT) Market Insight
The insulated gate bipolar transistor (IGBT) market is divided into type, power rating, application, and geographic markets. The type segment is divided into discrete IGBT and modular IGBT. Power rating is split into high-power, medium-power, and low-power. By application, the industry is split into automotive, consumer electronics, energy and power, travel and transportation, and others.
Global Insulated Gate Bipolar Transistor (IGBT) Market Geographical Competition
Asia-Pacific is the most important market for IGBTs, accounting for a large portion of the global market. The region is home to some of the world's major renewable energy markets, including China and India, which are projected to increase demand for IGBTs in the region. Furthermore, the region's increased use of electric vehicles is likely to drive demand for IGBTs in the automotive sector.
North America is another key market for IGBTs, thanks to the increasing use of renewable energy sources such as solar and wind power. The region also has a big number of electric car manufacturers and technological companies, which will fuel demand for IGBTs in the automotive sector.
Europe is also an important market for IGBTs, owing to the expanding use of renewable energy sources and the increased demand for energy-efficient power electronics in industrial and commercial applications. The region also has a big number of car manufacturers, which will stimulate demand for IGBTs in the automotive sector.
Latin America and the Middle East and Africa (MEA) are also likely to witness growth in the IGBT market, owing to rising demand for energy-efficient power electronics and increased use of renewable energy sources in these regions.
Global Insulated Gate Bipolar Transistor (IGBT) Industry Segment Analysis
Market By Type
· Discrete IGBT
· Modular IGBT
· Others
Market By Power Rating
· High-Power
· Low-Power
· Medium-Power
Market By Application
· Automotive
· Consumer Electronics
· Energy and Power
· Travel and Transportation
· Others
Insulated Gate Bipolar Transistor (IGBT) Market Leading Companies
The players profiled in the report are ABB Ltd., Fuji Electric Co., Ltd., Danfoss Group, Starpower, Hitachi, Ltd., Inneon Technologies AG, Littelfuse, Inc. Mitsubishi Electric Corporation, (IXYS)., Rohm Co., Ltd., and Toshiba Corporation.
Insulated Gate Bipolar Transistor (IGBT) Market Regions
North America
· U.S.
· Canada
Europe
· U.K.
· Germany
· France
· Spain
· Rest of Europe
Latin America
· Brazil
· Mexico
· Rest of Latin America
Asia-Pacific
· China
· Japan
· India
· Australia
· South Korea
· Rest of Asia-Pacific
Middle East & Africa
· GCC
· South Africa
· Rest of Middle East & Africa